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StressStation
New measurement trend in wafer bending:
According to ITRS and Intel’s CMOS process technology, stress technology has become one of the key technologies
in advanced nano-meter CMOS process including 90nm and beyond. This stress station is capable of stress
measurement in CMOS component and measurement of Piezo-resistance simultaneously. Similarly, this stress station
is applicable to many research fields such as nano-wire, nano-tube, FinFET, GaAs component, SiGe channel
component, Ge channel component, MEMS, LED, OLED, and PV.
Features：
- Direct measurement of sample’s strain.
- Intuitive mechanism design in wafer bending jig for easy operation.
- Measurement results used in published international SCI journal paper.
- Adjustable single axial-direction stress provided by designed bending jig. (Including tension and compression)
- Augmentable to include I-V measurement and low frequency noise
Specifications：
| Interface |
USB 2.0 |
Max. sample size |
80×100 mm |
| Measurement range |
300 MPa*1 |
adjustable span range in applied force |
95 mm |
| Stress resolution |
0.05 MPa |
Pitch in span adjustment |
continuous adjustable |
| Stress type |
tension or compression |
Dimension (length×width×height) |
240×210×195 mm |
| Young’s modulus measure |
Supported |
Weight |
5 Kg |
| Real-time stress calculation |
Supported |
Operating temperature |
-20 ~ +60℃ |
| Real-time displacement analysis |
Supported (Optional) |
Standard Accessory |
Calibration sample, Software CD, USB cable, |
| Stress and applied force measure |
Supported |
Language |
English |
| Max. applied force |
100 N |
PC Requirements |
CPU:P4, HD:1GB, USB 2.0 |
| Max. stroke of applied force |
3 mm |
Monitor Requirements |
1280*800 resolution |
| Adjustment of applied force |
simultaneously |
O.S. Supported |
Windows XP, WIN 7 |
*1: This range is calculated based on the Young’s modulus of silicon wafer.
If you are interesting in the Stress station, please download the catalog now. A sales representative will contact with you as soon as possible
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